Dislocation Scattering in ZnMgO/ZnO Heterostructures

The role of dislocation scattering in electron mobility in ZnMgO/ZnO heterostructures was studied. It was found that dislocation scattering was dominant in the low-electron concentration region. The total low-temperature mobility was calculated by considering dislocation scattering and interface-roughness scattering (IRS) together. The sheet density of dislocations was chosen as
N
_dis
=1.5 × 10
⁸
cm
^-2
and the IRS parameters were Δ = 5.206 and Λ = 30 Å. We obtained a good fit between our calculated results and experimental data reported in the works referenced.