A novel self-aligned gate-overlapped LDD poly-Si TFT with high reliability and performance

Gate-overlapped LDD poly-Si TFT fabricated by using poly Si-sidewall gates self-alignment process (Sa-GOLD), is proposed. The Sa-GOLD TFTs are suitable for high-speed operation because of small overlapping capacitance and large transconductance. Furthermore, they can reduce the drain electric field, and provide high reliability against drain-avalanche hot-carrier.