A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-/spl mu/m CMOS ULSIs

An advanced CMOS design, where a raised source/drain and contact windows are formed over the field oxide is realized by using P-doped SiGe and B-doped Si selective epitaxial growth techniques. Excellent short-channel characteristics and reduced parasitic drain junction capacitance were obtained. NMOS and PMOSFETs with an effective channel length of 0.12 /spl mu/m and ultra-shallow junctions with a depth of 25 nm were fabricated. These devices had a low extension resistance of about 370 /spl Omega//sq.