Impact of plasma-charging damage polarity on MOSFET noise

Plasma-charging damage is known to be a high-field injection phenomenon during plasma processing. It is also known that it can happen in either the gate-injection mode or substrate-injection mode, depending on the plasma potential distribution. However, the effect of this polarity difference on damage is seldom addressed. A number of groups have studied the impact of plasma-charging damage on low frequency MOSFET noise. The consensus is that plasma charging damage increases the low frequency noise of a MOSFET. However, in this work, we observed a strong dependence of the MOSFET low frequency noise on the polarity of plasma-charging damage. When the plasma-charging damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage whereas when the polarity is of the substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.