Silicon double-island single-electron device

A three-current-terminal single-electron device including two capacitively-coupled Si islands and gates that can control each island was fabricated on a Si-on-insulator wafer. Each island was embedded in one branch of a T-shaped Si wire. Current switching between the two branches was performed at 30 K by using the gate voltage to control the Coulomb blockade at each island. A correlation between these two currents was also found, which opens up the possibility of one-by-one transfer of electrons in this device.