Third-harmonic injection technique applied to a 5.87-to-7.56GHz 65nm CMOS Class-F oscillator with 192dBc/Hz FOM

The design of CMOS oscillators for the strict phase noise (PN) requirements of cellular standards, as well as low power consumption and thus high figure-of-merit (FoM), is very challenging. For example, in a GSM mobile station (MS), the PN requirement is -162dBc/Hz at 20MHz offset from a 915MHz carrier for a local oscillator (LO). On the other hand, LO power efficiency is a critical factor for a long-lasting battery life.