Fully integrated switched dual-band CMOS LNA for 802.11b/g WLAN and WiMAX applications

A fully integrated switchable dual-band low-noise amplifier (DB-LNA) for 802.11b/g and WiMAX applications is presented. By using switch effective inductance technique for the input matching network (IMN) and a switched LC tank to tune the amplifier gain, dual-band operation for 2.4 GHz and 3.5 GHz bands is achieved. Using a standard 0.18um CMOS process, a dual-band LNA with chip size comparable to a single-band one is designed. The DB-LNA exhibits a noise figure of 3.6 dB and 3.7 dB, input return loss of −12 dB and −19 dB, a power gain of 18 dB and 20 dB at the two frequency bands, respectively.