Study of dependence of HEMT noise parameters on gate periphery in microwave LNA design

Selection of the optimum gate periphery dimension of transistors is essential in LNA design for all applications. There are no explicit theoretical expressions to determine the dependency of the four noise parameters on the device gate periphery. Such dependency relationships can provide better guidance in device selection. In this work a dependency of noise figure, available gain, noise measure and noise resistance on gate dimension, at 6GHz spot frequency, is experimentally established based on several HEMTs from six different processes with varying gate periphery dimensions. This work serves as a building block of establishing a strong correlation of noise parameters of a HEMT on gate periphery dimension and confirms theoretical aspects that can aid microwave LNA designers in the selection of devices.