An accurate scalable nonlinear model for GaAs E-pHEMT and low noise amplifiers

An accurate non-linear large signal model is developed for GaAs E-pHEMT by revising the Verilog-A source code of the Angelov (Chalmers) model. The model is scalable and the scaling is fully verified by DC, thermal, capacitances, and S-parameters under multiple bias conditions. Excellent agreement between the simulation and measurement has been achieved for two device sizes at different temperatures. The model is applied to a low noise amplifier and can precisely predict RF power, gain, P
_1dB
, G
_1dB
, operation current, efficiency, OIP3, and noise figure.