An efficient AlGaN/GaN HEMT power amplifier MMIC at K-Band

This paper presents an efficient power amplifier MMIC at K-Band (20 GHz) designed for a 0.25 μm AlGaN/GaN HEMT process on three-inch s.i.-SiC substrates. A low-loss network topology is used for second-harmonic output matching to achieve high PAE. The measured amplifier has a maximum PAE of 41% and an associated output power of 31.4dBm when operated at a drain voltage of 20V. At 35V drain voltage, the amplifier exhibits a PAE of 34% and an associated output power of 34 dBm.