Circuit model for SelBox MOSFET

This paper presents an analysis of reduction of the kink effect observed in the current-voltage output characteristics of a partially depleted SOI MOSFET device. The back oxide for the device is introduced at selected regions below the source and drain and not continuously as in an SOI devices giving rise to what is termed Selective Back Oxide structure or “SELBOX” structure. Simulation results indicate that the proposed structure can significantly reduce the kink while still preserving major advantages offered by conventional SOI structure. In addition A device model that explains the kink behaviour of the structure is also developed.