Analytical modelling of current in higher width graphene nanoribbon field effect transistor

An analytical model for drain-source current of higher width graphene-nanoribbon field-effect-transistor (GNR-FET) with back and top gates is developed. This analytical model is based on the two-dimensional Poisson's equation in the weak nonlocality approximation. Analytical formula for drain-source current is derived in terms of device parameters and applied voltages. Dependence of current on applied voltages is investigated. It is shown that drain-source current is controlled by applied voltages hence has applications in digital and analog circuits.