Supply Voltage Dependent On-Chip Single-Event Transient Pulse Shape Measurements in 90-nm Bulk CMOS Under Alpha Irradiation

Direct on-chip pulse shape measurements of single-event transients (SETs) in a single inverter in 90-nm bulk CMOS have been performed at the microbeam facility at the Physikalisch-Technische Bundesanstalt (PTB), Braunschweig, Germany. Alpha particles with an energy of 8 MeV were used as projectiles, and the supply voltage dependence of the arising SETs was investigated. A strong dependence of the resulting pulse heights, widths, and shapes on the supply voltage could be observed.