Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide

This work presents a detailed study of the graphene RF mixer, comparing ambipolar and drain mixing for the first time. Output characteristics of the graphene transistor are analyzed and the effects of device scaling and interface state density on mixer performance are explained. We design a graphene RF transistor with gate length 750 nm, width 20 μm, and equivalent oxide thickness (EOT) ~2.5 nm to achieve record high conversion gain of -14 and -16 dB at LO power 0 dBm at 4.2 and 10 GHz, respectively, 100x higher than previously reported ambipolar mixing.