Effect of FIB milling on MEMS SOI cantilevers

Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from −10MPa/µm to −120MPa/µm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.