Slotted Hybrid III–V/Silicon Single-Mode Laser

In this letter, a III-V/silicon hybrid single-mode laser operating at L band for photonic integrated circuits is presented. The AlGaInAs gain structure is bonded onto a patterned silicon-on insulator wafer directly. The novel mode-selection mechanism based on a slotted silicon waveguide is applied, which only needs i-line projection photolithography in the whole fabrication process. At room temperature, we obtain 0.85 and 3.5 mW output power in continuous-wave and pulse-wave regimes, respectively. The side-mode suppression ratio of larger than 25 dB is obtained from experiments.