Downscaled graphene nanodevices: Fabrication and ab initio study

In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He
⁺
ion beam. We then study the effects of the He
⁺
ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.