An analytical threshold voltage model of strained surrounding-gate MOSFETs

Based on the comprehensive energy band structure of the strained-silicon and solving the 2D Poisson equation of the potential distribution in the channel, an analytical threshold voltage model of the strained surrounding-gate nMOSFET is developed. The dependence of the threshold voltage on the gate length, channel doping concentration and Ge content of the relaxed SiGe is studied using the model. The derived model shows good agreement with the numerical simulation.