Electrical and physical characteristics of the high-k Ti-doped Ce2O3 (Ce2Ti2O7) dielectrics combined with rapid thermal annealing

In this paper, electrical and physical characteristics of the addition of Ti into Ce
₂
O
₃
dielectric films on the single crystalline silicon were studied. It can be found that the high-k Ce
₂
Ti
₂
O
₇
gate dielectrics with post rapid thermal annealing (RTA) can show higher dielectric constant, smaller gate voltage shift, higher breakdown electric field and smaller charge trapping rate.