Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with ZrLaOx as gate dielectric

Pentacene organic thin-film transistor (OTFT) based on ZrLaO
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gate dielectric is proposed and has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. It reveals that the plasma treatment can greatly improve carrier mobility and shift the threshold voltage in the positive direction. With a threshold voltage less than 0.5 V, the OTFT can work at very low supply voltage. On the other hand, the ensuing ammonia annealing counteracts the plasma treatment and shifts the threshold voltage in the opposite direction.