A new GaP/a-Si:H/Bulk solar cell

In this paper we present for the first time a new GaP/a-Si:H/bulkSi solar cell. According to Silvaco TACD simulations, the GaP/a-Si:H/bulkSi solar cell has a high short-circuit current due to the downward bandgap bending. Moreover, a high doping a-Si:H can lead to a upward bandgap bending, resulting in a high open-circuit voltage. Although the GaP/a-Si:H/bulkSi solar cell has a low short-circuit current, a compensation can be achieved by the cell area or texture techniques. Furthermore, an optimized open-circuit voltage of 0.758V is also achieved.