Atomic layer deposition-based interface engineering for high-k/metal gate stacks

This review will discuss the in-situ surface engineering of active channel surfaces prior to or during the ALD high-k/metal gate deposition process. We will show that by carefully choosing ALD in-situ pre-treatment methods and precursor chemistries relevant electrical properties for future high-k dielectrics can be improved. Different high-k dielectrics such as Hafnium-Oxide (HfO
2
), Aluminum-Oxide (Al
2
O
3
), Lanthanum-Lutetium-Oxide (LaLuO
3
) and Lanthanum-Oxide (La
2
O
3
) for CMOS-based device technology are investigated in combination with Silicon (Si) and Germanium (Ge) substrates. Additionally, the use of ALD for deposition of a high-k dielectric gate stack on Graphene is discussed.