High-gate-injection tunneling field effect transistor for flash memory applications

In this paper, a tunneling filed effect transistor (TFET) based flash memory with high-gate injection efficiency is proposed and experimentally demonstrated. The measured injection efficiency (gate current (I
_g
) / drain current (I
_d
)) during programming is more than 10
^-4
in TFET flash devices which is two orders higher than that of the conventional ones. It is considered that this high injection efficiency is attributed to the strong channel electric field near source region. The results imply that this TFET flash device is promising for low power operation.