AFM images of undoped amorphous carbon thin films deposited by bias-assisted thermal-CVD

The undoped of amorphous carbon thin films were deposited by bias assisted thermal-CVD system at various deposition temperatures in the range 300°C to 500°C with fixed negative bias of -40V for 3 h deposition. The thin films were characterized by Atomic Force Microscopy (AFM), surface profiler, and I-V measurement. The results showed that the distributions of undoped thin films were more density when the temperature is increased at 400°C and 500°C for 3 h deposition times. The resistivity of undoped a-C thin film at 300°C, 350°C, 400°C and 500°C is 9.57×10
⁶
Ω/cm, 9.44×10
⁶
Ω/cm, 9.81×10
⁵
Ω/cm and 337738.124 Ω/cm respectively. The conductivity of thin films was increased by the increasing of temperature. The AFM images showed that, density and uniformity had correlated with the resistivity and conductivity of undoped amorphous carbon thin films for various temperatures.