Properties of ZnO/MgO multilayer films as insulating layer prepared by sol-gel method

This work present the synthesis of ZnO/MgO multilayer films using spin coating technique with different MgO layer thickness which are 171nm, 238nm and 506nm. The influence of MgO thickness on the insulating layer properties was investigated. The best prepared insulating layer to be used as dielectrics was found to be ZnO/MgO film deposited using 238 nm MgO layer. This is due to it uniformity, low porosity, high resistivity (28.7 × 10
⁵
Ω.cm) and low leakage current (below 1E-7). The particle produced also in nanometer dimension which in the range of 42 to 84 nm that will lead to the improvement in the device characteristic.