High-voltage operation of field-effect transistors in silicon carbide

Buried-gate field-effect transistors with blocking voltages up to 600-700 V have been fabricated in 6H polytype silicon carbide using a trench technology. The devices achieve drain currents of up to 60 mA for a channel width of 0.72 mm and have a turn off gate voltage of about 40 V. We report on the device characteristics and analyze the performance under high-voltage device operation.