SIMFCT: a MOS-gated FCT with high voltage-current saturation

This paper describes the SIMFCT: a new MOS-gated power device in which SIMOX technology is used to integrate a series MOSFET with a vertical FCT structure. The SIMFCT, exhibits high voltage-current saturation beyond the breakdown voltage of the lateral series MOSFET, and since it does not have a parasitic thyristor, it possesses a superior FBSOA when compared to the IGBT. The physics of device operation, results of two-dimensional numerical simulations and experimentally measured characteristics on SIMFCT structures fabricated using a nine mask SIMOX Smart Power process are presented.