40-Gb/s Colorless Reflective Amplified Modulator

In this letter, we demonstrate a colorless reflective amplified modulator operating within the C- and L-band spectral ranges with the modulation data rate up to 40 Gb/s. We obtain a stable, open eye performance of the device at the temperature until 85°C. The presented device is fabricated using an indium phosphide (InP) monolithic integration platform, which relies on an AlGaInAs quantum well active material, gap engineering by selective area growth, and low-parasitic RC semi-insulating buried heterostructures.