Investigation of the Internal Back Reflectance of Rear-Side Dielectric Stacks for c-Si Solar Cells

This paper addresses the calculation of internal back reflectance for various dielectrics that are used in rear-side passivated crystalline silicon solar cells. Optical modeling of various stack configurations is examined to explore the back-surface reflectance at the Si–dielectric interface for different film combinations and thicknesses as a function of wavelength and internal angle of incidence at the rear side. Specifically, configurations using aluminum oxide (AlO
$_{x}$
), silicon nitride (SiN
$_{x}$
), titanium dioxide (TiO
$_{2}$
), and silicon dioxide (SiO
$_{2}$
) were investigated with a focus on designing stack configurations that will also allow for high-quality passivation and are compatible with a high-volume manufacturing environment. In addition, samples were fabricated by plasma-enhanced and atmospheric pressure chemical vapor deposition of thin dielectric films onto polished and textured monocrystalline silicon wafers. Spectral reflectance curves of the samples are presented to supplement and validate the conclusions that are obtained from the optical modeling data.