A Battery Interconnect Module with high voltage transceiver using 0.25 µm 60V BCD process for Battery Management Systems

This work presents a Battery Interconnect Module (BIM) with high voltage (HV) transceiver for Battery Management Systems (BMS). BIM in BMS must be able to accommodate input voltage up to tens of volts, perhaps even hundreds of volts, which is difficult to be realized using a logic-based solution. To realize a possible solution on silicon, BIM shall be fabricated using an advanced HV semiconductor process, which usually is constrained by the voltage drop limitation between gate and source of HV devices. To overcome such a limitation, a HV switch is proposed in this work, including a HV Gate Voltage Driver (HVGVD) driving the HV MOS without any over-voltage hazard. An experimental prototype is implemented using a typical 0.25 µm 1-poly 3-metal 60V BCD process. The post-layout-extracted simulation results reveal that the worst-case error is less than 9 mV and the isolation between adjcent channels is −157 dB@10 MHz.