Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM

In this paper, we research on fin thickness (T
_fin
) and fin height (H
_fin
) effects on read stability and write ability of tri-gate FinFET based SRAM cell. The degree of drain induced barrier lowering changes with T
_fin
and fin H
_fin
. This makes threshold voltage (V
_th
) vary. Thus, T
_fin
and H
_fin
also influence the mean and standard deviation of read static noise margin (RSNM) and word-line write trip voltage (WWTV) since V
_th
variation is a dominant factor determining them. If T
_fin
increases, the mean of RSNM (μ
_RSNM
) and the mean of WWTV (μ
_WWTV
) decreases and increases, respectively, while the standard deviation of RSNM (σ
_RSNM
) and WWTV (σ
_WWTV
) are almost not changed. If H
_fin
increases, the μ
_RSNM
and μ
_WWTV
decreases and increases, respectively, while both σ
_RSNM
and σ
_WWTV
decrease. However, for a sufficiently small T
_fin
, the effect of H
_fin
on μ
_RSNM
and μ
_WWTV
becomes negligible.