Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors

Temperature (
T
)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The
T
-dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.