20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate

We report original results on GSMBE grown InAs/InP QD structures. Three single section devices show passive mode locking from 20 GHz to 83 GHz with low RF spectral width (32 kHz) and low pulse duration of 1.3 ps. We report also a double wavelength emission at high injection current, associated with degradation of mode locking properties. The real cause of these phenomena is still unclear.