Characteristics Variability Evaluation of Actual LSI Transistors with Nanoprobing

In this paper, we propose an evaluation method of characteristics variability of MOS transistors in an actual circuit with nanoprobing. Based on the evaluation of a huge scale test structure, we verified that the nanoprobing had ability for varia-bility evaluations. And the evaluation of SRAM cells in an actual LSI die, we confirmed that a variation of threshold voltage is normal distribution.