Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

In this letter, the effects of the interface acceptor-like traps on the transient responses of AlGaN/GaN high-electron mobility transistors (HEMTs) are investigated by means of experimental measurements and numerical simulations. The variation trends of the drain current
$I_{DS}$
stimulated by the gate
$(V_{GS})$
and drain
$(V_{DS})$
turn-on voltage pulses have been analyzed. The successive numerical simulations are carried out on the test structure, into which a trapping region at the AlGaN/GaN interface is introduced. The same variation trends are observed on both of the simulated
$V_{GS}$
and
$V_{DS}$
turn-on pulse measurements. The observation proves that the interface acceptor-like trap is the factor dominating the turn-on transient response of the HEMT devices.