Terahertz photon helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors

Terahertz (THz) light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors and silicon metal oxide semiconductor field effect transistors is reported. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature and fast (< 1 ns) characterization of all polarization parameters (Stokes parameters) of THz radiation. It paves the way towards THz ellipsometry and polarization sensitive imaging based on field-effect-transistors.