Enhancing 3T DRAMs for SRAM replacement under 10nm tri-gate SOI FinFETs

In this paper, we present the dynamic 3T memory cell for future 10nm tri-gate FinFETs as a potential replacement for classical 6T SRAM cell for implementation in high speed cache memories. We investigate read access time, retention time, and static power consumption of the cell when it is exposed to the effects of process and environmental variations. Process variations are extracted from the ITRS predictions and they are modeled at device level. For simulation, we use 10nm SOI tri-gate FinFET BSIM-CMG model card developed by the University of Glasgow, Device Modeling Group. When compared to the classical 6T SRAM, 3T cell has 40% smaller area, leakage is reduced up to 14 times while access time is approximately the same. In order to achieve higher retention times, we propose several cell extensions which, at the same time, enable post-fabrication/run-time adaptability.