Plastic Compatible Sputtered ${\hbox{Ta}}_{2}{\hbox{O}}_{5}$ Sensitive Layer for Oxide Semiconductor TFT Sensors

The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta
₂
O
₅
was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 °C and crystallize at 700 °C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 °C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 °C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.