Resistive switching behavior in TiN/HfO2/Ti/TiN devices

This work reports the bipolar resistive switching behavior of more than 100 back-end-of-line (BEOL) integrated 600×600nm
²
TiN/HfO
₂
/Ti/TiN MIM devices in a 4 kbit memory array. Reliable current-voltage switching characteristics were only observed for devices with a thickness ratio of 1 (10 nm HfO
₂
/10nm Ti), indicating the importance of the interface chemistry of the Ti/HfO
₂
interface. Moreover, the devices show good inter-cell uniformity and thus demonstrate promising prospects for embedded non-volatile memory (eNVM) applications.