Integrated 180 nm CMOS phototransistors with an optimized responsivity-bandwidth-product

A phototransistor with an optimized responsivity-band-width-product is presented in this paper. The device has a size of 40×40 μm
²
and is implemented in a standard 180 nm CMOS process. By means of a thick low doped p-epitaxial layer starting material (collector), a base formed as striped n-wells and an optimized design of the emitter high responsivity-bandwidth-product values up to 171.1 A/W*MHz are achieved.