Thermal conductivity of SOI device layers

Summary form only given. Self heating affects the performance and reliability of SOI circuits, particularly during ESD or in circuits requiring impedance matching. The temperature field in SOI devices is strongly influenced by heat conduction along the Si device layer, whose thermal conductivity is dominated by phonon transport and is reduced by scattering mechanisms. Although SOI device simulations need accurate values of the device-layer thermal conductivity, the impact of phonon-boundary scattering is not known. We use data and predictions to show that boundary scattering is very important for thin-film SOI and provides a model for device simulations.