The early breakdown characteristics of thin gate oxide on SOI wafers

The thin gate oxide (7 nm) grown on SOI substrates can be as good as grown on bulk wafer with very similar gate tunneling current characteristics, EFR, and defect density. Furthermore, the Early-Failure-Mode of thin gate oxide breakdown of SOI substrate is not sensitive to the surface roughness up to 1 nm (20/spl times/20 /spl mu/m/sup 2/), the silicon thickness (150 to 230 nm), the buried oxide thickness (190 to 400 nm), and the substrate type.