Unified characterization of RTN and BTI for circuit performance and variability simulation

In small devices, Bias Temperature Instability (BTI) produces discrete threshold voltage (V
_T
) shifts, which are attributed to the charge and discharge of single defects. In this work, the voltage and temperature dependences of charging/discharging of individual defects, considering their stochastic behavior, have been analyzed. From the results, and considering a previously presented BTI physics-based model, the corresponding V
_T
shifts in the device have been obtained and included in a circuit simulator, to evaluate their effects on SRAM cells performance and variability.