A Coupled Algorithm of Finite Volume Method with Monte-Carlo Method for Simulating Transient Radiation Effects of Semiconductor Devices

A coupled algorithm of FVM (Finite-Volume Method) with MC (Monte-Carlo) Method for particle transport has been developed in order to study the transient radiation response of semiconductor devices from device-level. A code based on GEANT4 is also built to trace the incident particle and to give the distribution of ionized charges, which acts as a source term in semiconductor governing equations. The transient response of irradiated devices is obtained by solving these equations numerically with FVM, and a part of results is compared with MEDICI' s, which agree well.