Properties of the intermediate mesa structure in deformation methods of obtaining islands of nanostructured silicon

In this work on the basis of use of modern methods of researches in a combination with methods of chemical selective etching structure the surface layer of silicon consisted of area of polycrystalline silicon and area which contained dislocation grids was studied after oxidation and ion implantation. It is shown that dislocation grids can serve a basis for mesa structure creation in different deformation methods of obtaining nanostructured silicon.