Uncooled hybrid receivers of direct detection of the MM-range on the basis of hot electrons bolometers based and Schottky diodes

Uncooled narrow-gap mercury-cadmium-telluride (MCT) semiconductor thin layers grown on GaAs substrates hybridized with antennas on low permittivity dielectric substrates were considered as 128-144 GHz direct detection 6-element bolometers. Noise equivalent power (NEP) of such detectors in the observed frequency range v ≈ 128-144 GHz reaches NEP
_300K
≈ 2.6×10
^-10
W/Hz
^1/2
(with calculated gain G ≈ 9 dBi). To compare the results obtained the measurements of GaAs conventional Schottky barrier diode (SBD) detectors were fulfilled in the same conditions for which the comparable to MCT bolometers NEP was obtained.