Selector devices for cross-point ReRAM

Both varistor-type bidirectional selector (VBS) and ultrathin NbO
₂
device with threshold switching (TS) characteristics were investigated. A highly non-linear VBS showed superior performances including high current density (>;3×10
⁷
A/cm
²
) and high selectivity (~10
⁴
). Ultrathin NbO
₂
exhibits excellent TS characteristics such as high temperature stability (~160
^o
C), good switching uniformity, and extreme scalability.