SEU and SEL response of the Westinghouse 64K E/sup 2/PROM, Analog Devices AD7876 12-bit ADC, and the Intel 82527 serial communications controller

The Westinghouse SA3823 64K E/sup 2/PROM radiation-hardened SONOS non-volatile memory exhibited a single-event-upset (SEU) threshold in the read mode of 60 MeV-cm/sup 2//mg and 40 MeV-cm/sup 2//mg for data latch errors. The minimum threshold for address latch errors was 35 MeV-cm/sup 2//mg. Hard errors were observed with Kr at V/sub P/= 8.5 V and with Xe at programming voltages (V/sub P/) as low as 7.5 V. No hard errors were observed with Cu at any angle up to V/sub P/=11 V. The system specification of no hard errors for Ar ions or lighter was exceeded. No single-event latchup (SEL) was observed in these devices for the conditions examined. The Analog Devices AD7876 12-bit analog-to-digital converter (ADC) had an upset threshold of 2 MeV-cm/sup 2//mg for all values of input voltage (V/sub in/), while the worst-case saturation cross section of /spl sim/2/spl times/10/sup -3/ cm/sup 2/ as measured with V/sub in/=4.49 V. No latchup was observed. The Intel 82C527 serial communications controller exhibited a minimum threshold for upset of 2 MeV-cm/sup 2//mg and a saturation cross section of about 5/spl times/10/sup -4/ cm/sup 2/. For latchup the minimum threshold was measured at 17 MeV-cm/sup 2//mg, and cross section saturated at about 3/spl times/10/sup -4/ cm/sup 2/. Error rates for the expected applications are presented.