Transient and total dose irradiation of BESOI 4K SRAM

A BESOI 4K SRAM was characterized in transient and total dose radiation environments. Transient upset level was explored as a function of radiation pulse width. A total dose experiment was performed to determine the level at which read or write failures occurred. In addition the total dose level at which imprinting occurred was determined. It was shown that devices fabricated in bonded and etchback (BESOI) technology should exhibit high dose-rate upset levels (above 10/sup 10/ rad(Si)/s) but may not be applicable for high total dose uses, especially if total dose imprinting is detrimental to the system. Total dose failures were observed above 4.3/spl times/10/sup 5/ rad(SiO/sub 2/) and imprinting occurred between 4 and 6/spl times/10/sup 4/ rad(SiO/sub 2/).