1.52-1.59 /spl mu/m range different-wavelength modulator-integrated DFB-LDs fabricated on a single wafer

The lasing wavelength of the 40-channel different-wavelength modulator-integrated MQW DFB-LDs that we fabricated on a wafer covered almost all of the expanded EDFA gain band from 1.527 to 1.593 /spl mu/m. The device provided uniform, high-performance characteristics such as a threshold current of less than 12 mA and transmission of 2.5 Gb/s-600 km.